@InProceedings{SandovaSilPadSilLaR:2017:EnElGf,
author = "Sandova, Marcelo A. Toloza and Silva, Erasmo Assump{\c{c}}{\~a}o
de Andrada e and Padilla, Jhon Elber Leon and Silva, Antonio
Ferreira da and La Rocca, Giuseppe Carlo",
affiliation = "{} and {Instituto Nacional de Pesquisas Espaciais (INPE)}",
title = "Engineering the electron g-factor tensor with tunnel-coupled
quantum wells",
year = "2017",
organization = "Brazilian Workshop on Semiconductor Physics, 18. (BWSP)",
abstract = "Aiming to provide new parameters to use in the electron g-factor
engineering and spintronic applications, we investigate the
interplay between quantum tunneling and structure inversion
asymmetry (SIA) effects on the electron g-factor anisotropy in
tunnelcoupled semiconductor quantum wells (QWs). Since the
g-factor anisotropy sign change in narrow wells is due to SIA and
determined by the electron average position, in double QW
structures the quantum tunneling effect plays a pivotal role
established by the central barrier length, which stands for the
coupling parameter between the wells. Due to the quantum
confinement, the anisotropic g-factor renormalization is take into
account within envelope-function theory based on the Kane model
for the bulk, deriving the effectivemass Hamiltonian for the
electronic states in III-V QWs in the presence of an external
magnetic field in the both fundamental configurations, i.e., in
the QW plane and along the growth direction. Using first order
perturbation theory, the corresponding components of the electron
g factor tensor are analytically calculated, as a function of the
QW width and central barrier length, for symmetric and asymmetric
tunnel-coupled InP/InGaAs QWs. Results for single and
noninteracting QWs are exactly reproduced as limit cases.",
conference-location = "Maresias, SP",
conference-year = "14-18 ago.",
language = "en",
targetfile = "sandoval_engineering.pdf",
urlaccessdate = "27 abr. 2024"
}